Color filter array, imagers and systems having same, and methods of fabrication and use thereof

ABSTRACT

A pixel cell with a photosensitive region formed in association with a substrate, a color filter formed over the photosensitive region, the color filter comprising a first material layer and a second material layer formed in association with the first shaping material layer.

FIELD OF THE INVENTION

This application is a divisional of U.S. application Ser. No. 11/510,703, filed on Aug. 28, 2006, the entire disclosure of which is incorporated herein by reference.

Embodiments of the invention relate generally to semiconductor devices and in particular to imager devices and methods of forming and using the same.

BACKGROUND OF THE INVENTION

Imager devices, including charge coupled devices (CCD), complementary metal oxide semiconductor (CMOS) sensors, and others have commonly been used in photo-imaging applications. A CMOS imager circuit includes a focal plane array of pixel cells, each one of the cells including a photosensitive region (or photosensor), for example, a photogate, photoconductor or a photodiode for accumulating photo-generated charge in the specified portion of the substrate. Each pixel cell has a charge storage region, formed on or in the substrate, which is connected to the gate of an output transistor that is part of a readout circuit. The charge storage region may be constructed as a floating diffusion region. In some imager circuits, each pixel may include at least one electronic device such as a transistor for transferring charge from the photosensor to the storage region and one device, also typically a transistor, for resetting the storage region to a predetermined charge level prior to charge transference.

In a CMOS imager, the active elements of a pixel cell perform the functions of: (1) photon to charge conversion; (2) accumulation of image charge; (3) resetting the storage region to a known state; (4) transfer of charge to the storage region; (5) selection of a pixel for readout; and (6) output and amplification of signals representing pixel reset level and pixel charge. Photo charge may be amplified when it moves from the initial charge accumulation region to the storage region. The charge at the storage region is typically converted to a pixel output voltage by a source follower output transistor.

Examples of CMOS imaging circuits, processing steps thereof, and detailed descriptions of the functions of various CMOS elements of an imaging circuit are described, for example, in U.S. Pat. No. 6,140,630; U.S. Pat. No. 6,376,868; U.S. Pat. No. 6,310,366; U.S. Pat. No. 6,326,652; U.S. Pat. No. 6,204,524; U.S. Pat. No. 6,333,205; and U.S. Pat. No. 6,852,591, all of which are assigned to Micron Technology, Inc. The disclosures of each of the foregoing are hereby incorporated by reference in their entirety.

The use of microlenses significantly improves the photosensitivity of the imaging device by collecting light from a large light collecting area and focusing it onto a small photosensitive area of the photosensor. Each photosensor is typically fabricated to absorb a wavelength of light associated for a particular color. Color filter arrays, typically formed below the microlenses, have been used to filter wavelengths of light associated with particular colors that are not intended to strike the underlying photosensor. Conventional color filter arrays are patterned and reflowed over respective photosensors. Microlens precursor blocks are subsequently patterned on the color filter array, and reflowed to produce a hemi-spherical shape to the overall microlens. During reflow of the color filter array, however, the patterned structures typically contract resulting in an uneven surface on which the microlens precursor blocks are formed. Contraction of up to 10% of the materials used to form the color filters is not uncommon. Microlenses subsequently formed over the contracted and uneven color filter array may have uncontrollably shifted focal points relative to a center of underlying photosensors.

The uncontrollably shifted focal points of the microlenses may result in increased cross-talk or a reduced efficiency of light capture. “Cross-talk” results when off-axis wavelengths of light strike a microlens or color filter at an obtuse angle of incidence. The off-axis wavelengths of light pass through material layers and miss the intended photosensors, and instead strike adjacent photosensors. Reduced light conversion efficiency may occur when the off-axis wavelengths strike a less than optimal spot on an intended photosensor. The problem of contracted color filter arrays is exacerbated by asymmetrical pixel cell architectures that have recently been proposed to increase photosensor array density. Asymmetrical pixel cell architecture demands the precise placement of color filters and overlying microlenses to focus light onto the photosensor. The slightest contraction of the color filter array and overlying microlenses may have detrimental effects upon the incidence of cross-talk.

Additionally, spaces or gaps between the color filters in the array may cause subsequently formed microlens precursors to assume a “bowed” or uneven topmost surface. Once the microlens precursors are patterned and reflowed, the microlenses shift, relative to a center of the underlying photosensor, into the bowed area, which may also result in increased cross-talk.

Accordingly, it is desirable to form color filter arrays having a substantially gapless surface for overlying microlenses formed thereon. By reducing the gapping between color filters in the color filter array, an overlying microlens array may have a reduced number of microlenses with shifted focal points. Additionally, due to the inevitability of shifting microlenses, it is desirable to control the shifting by controlling the shapes of the underlying color filters.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1C illustrate top-down and partial cross-sectional views of an imager device constructed in accordance with an embodiment of the invention;

FIGS. 2A-2D illustrate a method of fabricating the imager device illustrated in FIGS. 1A-1B;

FIG. 3 illustrates a partial cross-sectional view of an imager device constructed in accordance with a second embodiment of the invention

FIG. 4 illustrates a partial cross-sectional view of an imager device constructed in accordance with a third embodiment of the invention;

FIGS. 5A-5B illustrate partial top-down and cross-sectional views of an imager device constructed in accordance with a fourth embodiment of the invention;

FIG. 6 illustrates a partial cross-sectional view of an imager device constructed in accordance with a fifth embodiment of the invention;

FIG. 7 illustrates a partial cross-sectional view of an imager device constructed in accordance with a sixth embodiment of the invention;

FIG. 8 illustrates a partial cross-sectional view of an imager device constructed in accordance with a seventh embodiment of the invention;

FIGS. 9A-9B illustrate partial top-down and partial cross-sectional views, respectively, of an imager device constructed in accordance with a eighth embodiment of the invention;

FIGS. 10A-10B illustrates a partial cross-sectional view of an imager device constructed in accordance with a ninth embodiment of the invention;

FIG. 11 is a block diagram of a device incorporating the imager device constructed in accordance with FIGS. 1A-1B; and

FIG. 12 is a block diagram of a processor system incorporating the FIG. 11 imaging device in accordance with an embodiment of the invention.

DETAILED DESCRIPTION OF THE INVENTION

In the following detailed description, reference is made to various specific embodiments of the invention. These embodiments are described with sufficient detail to enable those skilled in the art to practice the invention. It is to be understood that other embodiments may be employed, and that various structural, logical and electrical changes may be made. The term “substrate” used in the following description may include any supporting structure including, but not limited to, a semiconductor substrate that has an upper semiconductor substrate surface. A semiconductor substrate should be understood to include silicon, silicon-on-insulator (SOI), silicon-on-sapphire (SOS), doped and undoped semiconductors, epitaxial layers of silicon supported by a base semiconductor foundation, and other semiconductor structures, including those made of semiconductors other than silicon. When reference is made to a semiconductor substrate or wafer in the following description, previous process steps may have been utilized to form regions or junctions in or over the base semiconductor or foundation. The substrate also need not be semiconductor-based, but may be any support structure suitable for supporting an integrated circuit, including, but not limited to, metals, alloys, glasses, polymers, ceramics, and any other supportive materials as is known in the art.

The term “pixel cell,” as used herein, refers to a photo-element unit cell containing a photosensitive region for converting photons to an electrical signal as may be employed by an imager device. Although the pixel cells are illustrated herein as CMOS four-transistor (or 4-T) pixel cells for convenience of description, the embodiment of the invention is not limited to any particular solid state sensor or any particular pixel cell architecture. For example, the pixel cells could have more or less than four transistors and the invention may be employed in any type of solid state imager device, CCD sensors being but one example.

With reference to the figures, where like numerals represent like elements, FIGS. 1A, 1B and 1C, respectively illustrate a partial top-down view, a partial cross-sectional view along the lines I-I of FIG. 1A, and a partial cross-sectional view along the lines II-II of FIG. 1A of a semiconductor-based imager device 100, such as a CMOS imager, constructed in accordance with an embodiment of the invention. The imager device 100 includes a pixel cell array 101 with first, second, and third pixel cells 102 _(B), 102 _(G), 102 _(R), respectively. First, second, and third pixel cells 102 _(B), 102 _(G), 102 _(R) correspond to wavelengths of light associated with the colors blue, green, and red, respectively. Those of ordinary skill in the art will recognize that the illustrated example is not intended to be limiting, and that first, second, and third pixel cells 102 _(B), 102 _(G), 102 _(R) could correspond to wavelengths of light associated with other colors of light; for example, cyan, magenta, and yellow and there may be more or less than there color pixels. It should also be noted that although FIGS. 1A, 1B, and 1C illustrate several pixel cells in the pixel cell array 101, the pixel cell array 101 could contain millions of pixel cells.

FIG. 1A illustrates first, second, and third pixel cells 102 _(B), 102 _(G), 102 _(R) having respective first, second, and third photosensitive regions 104 _(B), 104 _(G), 104 _(R) fabricated on a semiconductor substrate 106. The first, second, and third pixel cells 102 _(B), 102 _(G), 102 _(R) also include respective first, second, and third color filters 108 _(B), 108 _(G), 108 _(R) formed at a higher level of the illustrated pixel cell structure over respective first, second, and third photosensitive regions 104 _(B), 104 _(G), 104 _(R) and over a passivation layer 120. The first, second, and third color filters 108 _(B), 108 _(G), 108 _(R) comprise respective first, second, and base material layers 181 _(R), 181 _(G), 181 _(R) formed in association with respective first, second, and third conforming layers 182 _(B), 182 _(G), 182 _(R) and over the passivation layer 120. The pixel cell array also includes respective first, second, third microlenses 103 _(B), 103 _(G), 103 _(R) formed over the color filters 108 _(B), 108 _(G), 108 _(R).

As illustrated in FIG. 1B, the pixel cell array 101 also includes a light shield 126 having openings 126 a in optical alignment with respective photosensitive regions 104 _(B), 104 _(G), 104 _(R), and other conventional layers illustrated as first, second, and third interlayer dielectrics 172, 174, 176, respectively, and an insulating layer 170 over the active electrical elements of the pixel cells 102 _(B), 102 _(G), 102 _(R).

FIG. 1C illustrates a partial cross-sectional view taken along three second pixel cells 102 _(B). The second color filters 108 _(B) are coextensive with one another (also illustrated in FIG. 1A). The second conforming layers 182 _(B) of each of the second color filters 108 _(B) are substantially gapless, and collect more light than if the second conforming layers 182 _(B) of each of the second color filters 108 _(B) were not coextensive.

The imager device 100 of FIGS. 1A, 1B, and 1C has color filters (e.g., first, second, and third color filters 108 _(B), 108 _(G), 108 _(R)) that are not contracted relative to a center of the underlying photosensors (e.g., first, second, and third photosensors 104 _(B), 104 _(G), 104 _(R)), and have microlenses (e.g., first, second, and third microlenses 103 _(B), 103 _(G), 103 _(R)) which are in optical alignment with respective photosensitive regions 104 _(B), 104 _(G), 104 _(R). The formation of the conforming layers (e.g., first, second, and third conforming layers 182 _(B), 182 _(G), 182 _(R)) over the base material layers (e.g., first, second, and third base material layers 181 _(B), 181 _(G), 181 _(R)) may provide a substantially more planar first, second, and third color filters 108 _(B), 108 _(G), 108 _(R) formed over the semiconductor substrate 106 that conventional processes, discussed above with respect to the Background. Moreover, the microlenses formed thereon (e.g., first, second, and third microlenses 103 _(B), 103 _(G), 103 _(R)) may have reduced shifted focal points relative to a center of the underlying photosensitive regions 104 _(B), 104 _(G), 104 _(R). As a result, the imager device 100 may have a substantially reduced amount of cross-talk between pixel cells.

The first, second, and third color filters 108 _(B), 108 _(G), 108 _(R) correspond to a filter allowing first, second, and third wavelengths of light to strike respective photosensitive regions 104 _(B), 104 _(G), 104 _(R). Each of the microlenses 103 _(B), 103 _(G), 103 _(R) has a respective radius of curvatures R_(B), R_(G), R_(R) (FIG. 1B) that may be optimized to direct light of a particular wavelength to different depths within the photosensitive regions.

Additionally, the refractive indexes of the base material layers 181 _(B), 181 _(G), 181 _(R) and the conforming layers 182 _(B), 182 _(G), 182 _(R) are different, but need not be so. For example, the first base material layers 181 _(B), 181 _(G), 181 _(R) and the conforming layers 182 _(B), 182 _(G), 182 _(R) could be different from one another, and selected such that the refractive indexes focus light of a particular wavelength onto the focal plane 122 of the photosensitive regions 104 _(B), 104 _(G), 104 _(R). The illustrated base material layers 181 _(B), 181 _(G), 181 _(R) are greater than the conforming layers 182 _(B), 182 _(G), 182 _(R).

The imager device 100 of FIGS. 1A-1C has color filters that are fabricated in a manner as to decrease the susceptibility of contraction of the color filter array 111, as discussed in greater detail below. The decrease in the contraction of the color filter array 111 results in decreased cross-talk which may be associated with conventional methods of fabricating color filter arrays.

As discussed above with respect to FIG. 1C, adjacent second color filters 108 _(G) can be fabricated to be coextensive, reducing the amount of gapping between adjacent color filters. The reduction in gapping improves the amount of light capture, and also decreases the amount of possible cross-talk, or undirected light striking the photosensitive region array 112.

FIGS. 2A-2D illustrate a method of fabricating the FIG. 1B imager device 100 taken along line I-I of FIG. 1A. Specifically, FIG. 2A illustrates the patterning of the first, second, and third base material layers 181 _(B), 181 _(G), 181 _(R) over the passivation layer 120 of the imager device 100. The first, second, and third base material layers 181 _(B), 181 _(G), 181 _(R) could be formed of any transparent material including, but not limited to, zinc selenide (ZnSe), silicon oxide, silicon nitride, silicon oxynitride, silicon-carbon (SiC) (BLOk), tantalum pentoxide (Ta₂O₅), titanium oxide (TiO₂), polymethylmethacrylate, polycarbonate, polyolefin, cellulose acetate butyrate, polystyrene, polyimide, epoxy resin, photosensitive gelatin, acrylate, methacrylate, urethane acrylate, epoxy acrylate, polyester acrylate, or a positive or negative photoresist such as a 3000 series photoresist material (or any other series of photoresist material) produced by FUJIFILM Electronic Materials (FFEM), Japan, including, but not limited to color resists known in the art as SB-3000L, SG-3000L and SR-3000L for blue, green, and red color filters, respectively. It should also be noted that the materials could be selected from a manufacturer other than FUJIFILM, and that the materials could be any color filtering material.

The materials selected should correspond to filtering a particular wavelength of light from striking the photosensitive regions 104 _(B), 104 _(G), 104 _(R). Accordingly, in one embodiment of the invention, the first, second, and third base material layers 181 _(B), 181 _(G), 181 _(R) comprise SB-3000L, SG-3000L and SR-3000L, respectively. The base material layers 181 _(B), 181 _(G), 181 _(R) are deposited over the passivation layer 120 by conventional coating methods, including, but not limited to, spin-coating methods, and selectively patterned over the first, second, and third photosensitive regions 104 _(B), 104 _(G), 104 _(R), respectively.

The base material materials 181 _(B), 181 _(G), 181 _(R) can be selectively patterned by forming base material layer precursors over the photosensitive regions 104 _(B), 104 _(G), 104 _(R), and selectively exposing the base material layer precursors to ultraviolet (UV) light. As known in the art, a negative photoresist is polymerized when exposed to UV light. Accordingly, if negative photoresist materials are used to form the first, second, and third base material layers 181 _(B), 181 _(G), 181 _(R) the base material layer precursors are selectively masked such that only those portions of the base material layer precursors intended to form first, second, and third base material layers 181 _(B), 181 _(G), 181 _(R) are exposed to UV light. Those portions that are unnecessary are not exposed to light, and are removed by a developer solution.

Conversely, a positive photoresist is exposed with UV light wherever the underlying material is to be removed. Accordingly, if positive photoresist materials are used to form first, second, and third base material layers 181 _(B), 181 _(G), 181 _(R), the base material layer precursors are selectively masked such that only those portions of the base material layer precursors that are unnecessary are exposed to light, and are subsequently removed by a developer solution. The unexposed portions of the positive photoresist remain behind to form the first, second, and third base material layers 181 _(B), 181 _(G), 181 _(R).

It should be noted that although FIG. 2A illustrates the deposition and patterning of the first, second, and third base material layers 181 _(B), 181 _(G), 181 _(R) in a single step, one of ordinary skill in the art will recognize that the base material layers 181 _(B), 181 _(G), 181 _(R) are layered over the passivation layer 120 in separate steps. For example, the precursor to the first base material layer 181 _(B) could be deposited by conventional coating methods, including, but not limited to, spin-coating methods, over the passivation layer 120, masked, exposed to UV light, and exposed to developer to pattern the first base material layers 181 _(B). A precursor to the second base material layer 181 _(G) can subsequently be deposited over the passivation layer 120, masked, exposed to UV light, and exposed to developer to pattern the second base material layers 181 _(G). Lastly, a precursor to the third base material layer 181 _(R) can be deposited over the passivation layer 120, masked, exposed to UV light, and exposed to developer to pattern the third base material layers 181 _(R).

Additionally, it should be recognized that the first, second, and third base material layers 181 _(B), 181 _(G), 181 _(R) could all be formed of a material that does not filter any particular wavelength of light associated with a particular color. For example, the first, second, and third base material layers 181 _(B), 181 _(G), 181 _(R) could all be formed of a clear, transparent material, simplifying the processing steps involved in making the first, second, and third base material layers 181 _(B), 181 _(G), 181 _(R) by patterning a single material for all three base material layers.

As illustrated in FIG. 2A, the first, second, and third base material layers 181 _(B), 181 _(G), 181 _(R) contract from their original size during processing, as illustrated by the dashed lines, and discussed above with respect to the Background. Contraction of approximately 10% of the width may occur. Therefore, a base material layer formed over the passivation layer 120 that is 10 microns wide (as measured by a side cross-sectional view) could contract as much as 1 micron (or, as illustrated, 0.5 microns on both sides of the first, second, and third base material layers 181 _(B), 181 _(G), 181 _(R)), leaving a gap between the base material layers (e.g., first and second base material layers 181 _(B), 181 _(G)) of approximately 1 micron.

FIG. 2B illustrates the deposition of the first conforming layer 182 _(B). The first conforming layer 182 _(B) could be formed of any transparent material including, but not limited to, zinc selenide (ZnSe), silicon oxide, silicon nitride, silicon oxynitride, silicon-carbon (SiC) (BLOk), tantalum pentoxide (Ta2O5), titanium oxide (TiO2), polymethylmethacrylate, polycarbonate, polyolefin, cellulose acetate butyrate, polystyrene, polyimide, epoxy resin, photosensitive gelatin, acrylate, methacrylate, urethane acrylate, epoxy acrylate, polyester acrylate, or a positive or negative photoresist such as a material consisting of a 3000 series material fabricated by FUJIFILM Electronic Materials (FFEM), Japan, including, but not limited to color resists such as SB-3000L, SG-3000L and SR-3000L for blue, green, and red color filters, respectively. The illustrated first conforming layer 182 _(B) is formed of SB-3000L, the same material used for the underlying base material layer 181 _(B).

The illustrated first conforming layer 182 _(B) is deposited by conventional methods, including, but not limited to, spin-coating methods. The spin-coating technique provides a simplified fabrication process resulting in a material layer with minimal fabricating costs. During the deposition of the first conforming layer 182 _(B), the underlying first base material layer 181 _(B) acts as a barrier over which the material forming the first conforming layer 182 _(B) must traverse. The first conforming layer 182 _(B) conforms to the contours of the uneven surface of the intermediate structure, and flows into the gaps or spaces between the base material layers.

As discussed below, the first conforming layer 182 _(B) may have inherent surface tensions that are selected to provide different shapes to any of the first, second, and third conforming layers 182 _(B), 182 _(G), 182 _(R). Different materials have different inherent surface tension properties (measured in dynes/cm); accordingly, the material forming the first conforming layer 182 _(B) could be selected for the intended application. For example, a material having a higher surface tension is used for applications in which a more spherical shape than illustrated in FIG. 2B is desired. Conversely, a material having a lower surface tension is used for applications in which a substantially planar surface is desired. The surface tension of the illustrated first conforming layer 182 _(B) is low, thereby creating a substantially planar surface.

It should be noted, however, that materials often have varying degrees of surface tension depending on the conditions in which the materials are deposited. For example, materials typically have a greater surface tension at cooler temperatures (e.g., 20° C.) as compared to the surface tension of the material at higher temperatures (e.g., 70° C.). Therefore, the conditions at which the first conforming layer 182 _(B) is deposited can be varied to shape the resulting first color filter 108 _(B) (FIG. 1B).

FIG. 2B also illustrates a mask 190 formed over portions of the first conforming layer 182 _(B)′, which is formed of a negative photoresist. The entire FIG. 2B structure is then exposed to UV light to polymerize the exposed first conforming layer 182 _(B). The mask 190 is removed, and the portions of the first conforming layer 182 _(B)′ that were not polymerized are dissolved by a developer solution, leaving behind only the first conforming layer 182 _(B) over the first photosensitive region 104 _(B). As illustrated, the first, second, and third base material layers 181 _(B), 181 _(G), 181 _(R) are substantially immune from further contraction; as illustrated in FIG. 2C, however, the first conforming layer 182 _(B) does contract during processing.

FIG. 2C illustrates the deposition of the second conforming layer 182 _(G). The second conforming layer 182 could be formed of any transparent material including, but not limited to, zinc selenide (ZnSe), silicon oxide, silicon nitride, silicon oxynitride, silicon-carbon (SiC) (BLOk), tantalum pentoxide (Ta₂O₅), titanium oxide (TiO₂), polymethylmethacrylate, polycarbonate, polyolefin, cellulose acetate butyrate, polystyrene, polyimide, epoxy resin, photosensitive gelatin, acrylate, methacrylate, urethane acrylate, epoxy acrylate, polyester acrylate, or a positive or negative photoresist such as a material consisting of a 3000 series material fabricated by FUJIFILM Electronic Materials (FFEM), Japan, including, but not limited to color resists such as SB-3000L, SG-3000L and SR-3000L for blue, green, and red color filters, respectively. The illustrated conforming layer 182₆ is formed of SG-3000L, the same material used for the underlying base material layer 181 _(G).

The illustrated second conforming layer 182 _(G) is deposited by conventional coating methods, including, but not limited to, spin-coating methods, as discussed above with respect to FIG. 2B. During the deposition of the second conforming layer 182 _(G), the underlying second base material layer 181 _(G) acts as a barrier over which the material forming the second conforming layer 182 _(G) must traverse, as discussed above with respect to FIG. 2B. The second conforming layer 182 _(G) fills the gaps between the color filters (e.g., first, second, and third color filters 108 _(B), 108 _(G), 108 _(R) of FIG. 1B). Like the second conforming layer 182 _(B), the second conforming layer 182 _(G) can be selected or deposited in conditions to have a predetermined surface tension.

Masks 190 are selectively placed over the first conforming layer 182 _(B) and the third base material layer 182 _(R). The entire FIG. 2C structure is subsequently exposed to UV light, which polymerizes the second conforming layer 182 _(G). The masks 190 are removed, and portions of the second conforming layer 182 _(G)′ are subjected to developer and removed.

FIG. 2D illustrates the deposition of the third conforming layer 182 c. The third conforming layer 182 c could be formed of any transparent material including, but not limited to, zinc selenide (ZnSe), silicon oxide, silicon nitride, silicon oxynitride, silicon-carbon (SiC) (BLOk), tantalum pentoxide (Ta₂O₅), titanium oxide (TiO₂), polymethylmethacrylate, polycarbonate, polyolefin, cellulose acetate butyrate, polystyrene, polyimide, epoxy resin, photosensitive gelatin, acrylate, methacrylate, urethane acrylate, epoxy acrylate, polyester acrylate, or a positive or negative photoresist such as a material consisting of a 3000 series material fabricated by FUJIFILM Electronic Materials (FFEM), Japan, including, but not limited to color resists such as SB-3000L, SG-3000L and SR-3000L for blue, green, and red color filters, respectively. The illustrated conforming layer 182 _(R) is formed of SR-3000L, the same material used for the underlying base material layer 181 _(R).

The illustrated third conforming layer 182 _(R) is deposited by conventional coating methods, including, but not limited to, spin-coating methods, as discussed above with respect to FIG. 2B. During the deposition of the third conforming layer 182 _(R), the underlying third base material layer 181 _(R) acts as a barrier over which the material forming the third conforming layer 182 _(R) must traverse, as discussed above with respect to FIG. 2B. The third conforming layer 182 _(R) fills the gaps between the color filters (e.g., first, second, and third color filters 108 _(B), 108 _(G), 108 _(R) of FIG. 1B). Like the second conforming layer 182 _(B), the third conforming layer 182 _(R) can be selected or deposited in conditions to have a predetermined surface tension.

A mask 190 is selectively placed over the first and second conforming layers 182 _(B), 182 _(G). The entire FIG. 2D structure is subsequently exposed to UV light, which polymerizes the third conforming layer 182 _(R). The mask 190 is removed, and portions of the second conforming layer 182 _(R)′ are subjected to developer and removed. Microlens precursor blocks are patterned and reflowed over the microlens array 111 (FIG. 1B), resulting in the imager 100 illustrated in FIGS. 1A-1C.

Unlike conventional processing techniques, the illustrated method of fabrication provides for a substantially gapless color filter array without a high incidence of problems associated with the shifting of focal points of overlying microlenses. The reduction of the shifting focal lengths problem improves the overall quantum efficiency. Additionally, the first and second material layers can be deposited onto asymmetrically formed photosensitive regions, as discussed below with respect to FIGS. 8-10B.

It should also be noted that although the conforming layers 182 _(B), 182 _(G), 182 _(R) are illustrated as filtering a corresponding wavelength of light from striking the photosensitive regions 104 _(B), 104 _(G), 104 _(R), the embodiment of the invention is not so limited. For example, the conforming layers 182 _(B), 182 _(G), 182 _(R) could all be formed of the same material, and the filtering of corresponding wavelengths of light could be performed by the underlying base material layers 181 _(B), 181 _(G), 181 _(R). The base material layers 181 _(B), 181 _(G), 181 _(R) are patterned in successive patterning steps such that first, second, and third wavelengths of light are filtered by the base material layers 181 _(B), 181 _(G), 181 _(R), and strike the intended photosensitive regions 104 _(B), 104 _(G), 104 _(R).

Although FIGS. 2A-2D are illustrated as having the conforming layers 182 _(B), 182 _(G), 182 _(R) formed between the base material layers 181 _(B), 181 _(G), 181 _(R), it should be recognized that the conforming layers 182 _(B), 182 _(G), 182 _(R) could be between and over the base material layers 181 _(B), 181 _(G), 181 _(R), as illustrated below with respect to FIG. 4.

Additional material layers could be formed over the FIG. 1A imager device 100. For example, as illustrated in FIG. 3, a coating 110′ could be formed over the FIG. 1A imager device 100 to arrive at the FIG. 3 imager device 100′. The coating 110′ is illustrated as being substantially planar, which may provide for better handling throughout subsequent manufacturing processes and additional rigidity to the overall imager device 100′. The substantially planar coating 110′ could be formed by conventional coating methods, including, but not limited to, spin-coating methods, as discussed above. The coating 110′ could be formed of any of the materials discussed above with respect to FIG. 2A.

FIG. 4 illustrates a cross-sectional view of an imager device 200 constructed in accordance with a third embodiment of the invention. Like the imager device 100 illustrated in FIGS. 1A-1C, the FIG. 4 imager device 200 has an array of first, second, and third pixel cells 202, 202′, 202, respectively. At least one of the pixel cells (i.e., pixel cell 202′) is different from the other two pixel cells (i.e., pixel cells 202) in the array. As discussed above with respect to FIGS. 2A-2D, the materials forming the conforming layers 208 b, 208 b′, 208 b are selected (based on their respective surface tensions) or deposited in conditions such that they form rounded structures over the underlying base material layers 208 a, 208 a′, 208 a.

The illustrated imager device 200 has a second pixel cell 202′ having a different radius of curvature R′ from the radius of curvatures R of the adjacent first and third pixel cells 202. In the embodiment, the first and third pixel cells 202 correspond to a first wavelength of light, and the second pixel cell 202′ corresponds to a second wavelength of light, which is different from the first wavelength of light.

FIG. 4 illustrates the second pixel cell 202′ having a color filter 208′ that has a base material layer 208 a′ formed below a conforming layer 208 b′. The first and third pixel cells 202 also have color filters 208 comprised of base material layers 208 a formed below conforming layers 208 b.

The base material layer 208 a′ has a height h′ that is different from the heights h associated with adjacent base material layers 208 a such that the conforming layer 208 b′ comprises a different volume when compared to the adjacent conforming layers 208 b. The smaller volume of the conforming layer 208 b′ reduces the overall radius of curvature R′ of the color filter 208′ as compared to adjacent color filters 208. By varying the underlying size (one or more of height, weight, length) of base material layers (e.g., base material layers 208 a, 208 a′), the volume of the overlying conforming layer (e.g., conforming layer 208 b, 208 b′) can be varied. By varying the volume of the conforming layer 208 b, 208 b′, the overall radius of curvatures (e.g., radius of curvatures R, R′) can also be varied, which may result in varied (or asymmetrical) focal lengths 122, 122′.

The ability to vary the focal lengths (e.g., focal lengths 122, 122′) of the overall color filters 208, and, to an extent necessary, the focal lengths of optional overlying coating 210, 210′, is important in image capture. As is known in the art, light at different wavelengths is absorbed at different depths within a photosensitive region; wavelengths corresponding to blue are typically absorbed near the top surfaces of photosensitive regions (e.g., photosensitive region 204), wavelengths corresponding to red are typically absorbed at or near the p-n junctions of photosensitive regions, and wavelengths corresponding to green are typically absorbed between the top surfaces and p-n junctions of photosensitive regions.

FIG. 4 illustrates pixel cells 202, 202′ that have focal lengths 122, 122′ that are optimized for the absorption of wavelengths corresponding to the colors red and green, respectively. The imager device 200 has color filters 208, 208′ that have radius of curvatures R, R′, respectively, that are designed to focus light onto respective photosensitive regions 204, 204′.

The FIG. 4 imager device 200 is fabricated in substantially the same manner as the imager device 100 illustrated in FIGS. 1A and 1B; at least one of the base material layers (e.g., base material layer 208 a′) is typically planarized to a lower height h′ than adjacent base material layers (e.g., first material layers 208 a) having a greater height h. The second material layers 208 b, 208 b′ are subsequently formed over the base material layers 208 a, 208 a′ to form the overall color filter 208. The optional coating 210, 210′ can be formed over the color filters 208, 208′, if desired.

FIGS. 5A and 5B illustrate top-down and cross-sectional view, respectively, of an imager device 300 constructed in accordance with a fourth embodiment of the invention. FIG. 5A illustrates a Bayer pattern comprising first, second, and third pixel cells 302 a, 302 b, 302 c. As illustrated in FIG. 5B, a cross-sectional view taken along line of FIG. 5A, the first pixel cell 302 a has a first color filter 308 a having a first base material layer 308 aa formed below a first conforming layer 308 ba. An optional first coating 310 a is illustrated as being formed over the first color filter 308 a. The first base material layer 302 aa of the first color filter 308 a has a height ha, which results in the first color filter 308 a and the overlying first coating 310 a having a first radius of curvature Ra. The first radius of curvature Ra is illustrated as being shorter in comparison to adjacent second and third radius of curvatures Rb, Rc, respectively. The first radius of curvature Ra directs light onto a first focal plane 322 a. The first focal length coincides with the absorption depth of wavelengths of light corresponding to the color blue in a first photosensitive region 304 b, as discussed above with respect to FIG. 4.

The second pixel cell 302 b has a second color filter 308 b having a second base material layer 308 ab formed below a second conforming layer 308 bb. An optional second coating 310 b is formed over the second color filter 308 b of the imaging device 300. The illustrated second base material layer 308 ab has a second height hb, which effects the overlying curvature of the second color filter 308 b and the second coating 310 b resulting in a second radius of curvature Rb. The radius of curvature Rb is such that the second color filter 308 b and the second coating 310 b direct light onto a second focal length 322 b; the second focal length 322 b coincides with the absorption depth of wavelengths of light corresponding to the color green in a second photosensitive region 304 g, as discussed above with respect to FIG. 4.

Similarly, the third pixel cell 302 c has a third color filter 308 c having a third base material layer 308 ac formed below a third conforming layer 308 bc. An optional third coating 310 c is formed over the third color filter 308 c of the imaging device 300. The illustrated third base material layer 308 ac has a third height hc, which effects the overlying curvature of the third color filter 308 c and the third coating 310 c resulting in a third radius of curvature Rc. The radius of curvature Rc is such that the third color filter 308 c and the third coating 310 c direct light onto a third focal length 322 c; the third focal length 322 c coincides with the absorption depth of wavelengths of light corresponding to the color red in a third photosensitive region 304 r, as discussed above with respect to FIG. 4.

The imager device 300 of FIGS. 5A and 5B is fabricated in substantially the same manner as the imager device 100 of FIGS. 1A and 1B (illustrated in FIGS. 2A-2E); however, the first base material layer 308 aa is formed prior to the second and third base material layers such that the first base material layer 308 aa can be planarized to a height ha prior to the deposition of the second and third base material layers 308 ab, 308 ac. Similarly, the second base material layer 308 ab is formed prior to the third base material layer 308 ac, such that the second base material layer 308 ab can be planarized to a height hb prior to the deposition of the third base material layer 308 ac. The first, second, and third conforming layers 308 ba, 308 bb, 308 bc are subsequently formed over respective first, second, and third base material layers 308 aa, 308 ab, 308 ac to form the overall first, second, and third color filters 308 a, 308 b, 308 c. The optional coating 310 a, 310 b, 310 c can be formed over the color filters 308 a, 308 b, 308 c, if desired.

FIG. 6 illustrates an imager device 300′ constructed in accordance with a fifth embodiment of the invention. The illustrated cross-sectional view of the imager device 300′ is taken along line of FIG. 5A. The imager device 300′ is similar to the FIG. 5 imager device 300; however, the imager device 300′ has first, second, and third base material layers 308 aa′, 308 ab′, 308 ac′ comprised of multiple material layers (or stacks). The first, second, and third base material layers 308 aa′, 308 ab′, 308 ac′ are formed by depositing multiple material layers over the passivation layer 120. The multiple material layers may be deposited by any deposition technique; for example, spin-coat deposition. The multiple layers are subsequently selectively etched and selectively planarized to form first, second, and third base material layers 308 aa′, 308 ab′, 308 ac′ having different heights ha, hb, hc, respectively. The first, second, and third conforming layers 308 ba, 308 bb, 308 bc are formed over the first, second, and third base material layers 308 aa′, 308 ab′, 308 ac′ resulting in first, second, and third color filters 308 a, 308 b, 308 c with first, second, and third radius of curvatures Ra, Rb, Rc, respectively.

FIG. 7 illustrates further optional processing of the FIG. 5 imager device 300. Specifically the first, second, and third color filters 308 a, 308 b, 308 c and the first, second, and third coating 310 a, 310 b, 310 c are selectively etched to create vias 360 in between the first, second, and third pixel cells 302 a, 302 b, 302 c. Creating vias 360 may reduce the amount of cross-talk between pixel cells (e.g., first, second, and third pixel cells 302 a, 302 b, 302 c). “Cross-talk” results when off-axis wavelengths of light strike a coating or color filter at an obtuse angle of incidence. The off-axis wavelengths of light pass through material layers and miss the intended photosensitive regions, and instead strike adjacent photosensitive regions. Creating the vias 360 isolate the first, second, and third pixel cells 302 a, 302 b, 302 c from one another such that the incidence of cross-talk may decrease.

FIG. 8 illustrates further optional processing of the FIG. 7 imager device 300. To further reduce the incidence of cross-talk, spacer structures 362 made of an opaque material may be formed within the vias 360 (FIG. 6). The spacer structures 362 can be formed by conventional deposition techniques. The spacer structure 362 limit wavelengths of light from striking the first, second, and third photosensitive regions 304 b, 304 g, 304 r of the first second and third pixel cells 302 a, 302 b, 302 c.

It should be noted that the FIG. 5 imager device need not be further processed, and that the illustrations and descriptions relating to FIGS. 7-8 are only optional. Additionally, it should be noted that the imager device 300 of FIGS. 5-8 may undergo further processing, and that the illustrations and descriptions thereto are only examples.

FIGS. 9A and 9B illustrate top-down and cross-sectional views, respectively, of an imager device 400 constructed in accordance with an eighth embodiment of the invention. FIG. 9A illustrates a Bayer pattern comprising first, second, and third pixel cells 402 a, 402 b, 402 c. As illustrated in FIG. 9B, a cross-sectional view taken along line IV-IV of FIG. 9A, The imager device 400 is similar to the FIG. 8 imager device 300; however, the processing steps performed to form the FIG. 9 imager device 400 are different, resulting in structural differences between the two imager devices.

As illustrated, the imager device 400 has first, second and third pixel cells 402 a, 402 b, 402 c having respective first second and third color filters 408 a, 408 b, 408 c. The first second and third color filters 408 a, 408 b, 408 c have respective first, second, and third base material stacks 481 a, 481 b, 481 c, formed below respective first, second, and third conforming layers 482 a, 482 b, 482 c. The illustrated first, second and third base material stacks 481 a, 482 b, 482 c are formed of multiple material layers in substantially the same manner as discussed above with respect to FIG. 6. Spacer structures 462 are subsequently formed between the first, second, and third base material stacks 481 a, 482 b, 482 c. The first, second, and third conforming layers 482 a, 482 b, 482 c are deposited over respective first, second, and third base material stacks 481 a, 482 b, 482 c, and take on a shape based on the heights of the first, second, and third base material stacks 481 a, 482 b, 482 c. The interaction between the material used to form the first, second, and third conforming layers 482 a, 482 b, 482 c and the spacer structures 462 results in the first, second, and third conforming layers 482 a, 482 b, 482 c having corresponding first, second, and third shapes.

As illustrated, the first conforming layer 482 a has a depressed shape as a result of the first base material stack 481 a having a topmost surface with a height less than a topmost surface of the adjacent spacer structures 462. Due to the surface tension of the material used to form the first conforming layer 482 a, the resulting first conforming layer 482 a has edges 483 a that have topmost surfaces with a height h1 greater than the height h2 of a middle portion 484 a of the first conforming layer 482 a. The first color filter 408 a directs light onto a focal plane 422 a at or near to a top surface of a respective photosensitive region 404 b. Although illustrated as having edges 483 a that have topmost surfaces with a height h1 greater than the height h2 of a middle portion 484 a of the first conforming layer 482 a, this is not intended to be limiting in any way.

For example, the second pixel cell 402 b includes the second color filter 408 b having a second base material stack 481 b that is substantially the same height h3 as the adjacent spacer structures 462. Edges 483 b of the overlying second conforming layer 482 b, therefore, have a height h4 lower than a height h5 associated with a middle portion 484 b of the second conforming layer 482 b. As a result of the surface tension inherent in the material used to form the second conforming layer 482 b, the middle portion 484 b of the second conforming layer 482 b is substantially planar. The second color filter 408 b directs light onto a focal plane 422 b corresponding to a depth below a top surface of a respective photosensitive region 404 g.

The third pixel cell 402 c includes the third color filter 408 c having a third base material stack 481 c with a height greater than the adjacent spacer structures 462. As a result of the surface tension inherent in the material used to form the third conforming layer 482 c, a middle portion 484 b of the second conforming layer 482 c has a substantially hemi-spherical shape. The third color filter 408 c directs light onto a focal plane 422 c corresponding to a depth near the p-n junction of a respective photosensitive region 404 c.

It should be noted that the heights of the base material stack and spacer structures could be selected such that the conforming layers are substantially planar after deposition. The substantially planar surface would allow for an ideal platform on which microlenses could be subsequently formed. Additionally, the heights of the base material stack and spacer structures could be selected such that the conforming layers are substantially non-planar after deposition. By controlling the shapes of the underlying color filter, the focal points of deposited microlenses could be controlled to have shifted focal points relative to a center of the microlens.

FIGS. 10A and 10B illustrate top-down and cross-sectional views, respectively, of an imager device 500 constructed in accordance with a ninth embodiment of the invention. FIG. 10A illustrates a Bayer pattern comprising first, second, and third pixel cells 502 a, 502 b, 502 c. As illustrated in FIG. 10B, a cross-sectional view taken along line V-V of FIG. 10A, the imager device 500 includes first, second, and third pixel cells 502 a, 502 b, 502 c having respective first, second, and third color filters photosensitive regions 504 b, 504 g, 5404 r. The first and second photosensitive regions 504 b, 504 g have a first distance D1 between each other; the second and third photosensitive regions 504 g, 5404 r have a second distance D2 between each other. As illustrated, the first distance D1 is greater than the second distance D2. Shared pixel cell technologies typically employ asymmetrical distances between photosensitive regions of a pixel array.

Accordingly, the first second and third color filters 508 a, 508 b, 508 c have respective first, second, and third base material layers 581 a, 581 b, 581 c, formed below respective first, second, and third conforming layers 582 a, 582 b, 582 c. The first, second, and third base material layers 581 a, 581 b, 581 c are patterned over the first, second, and third photosensitive regions 504 a, 504 b, 504 c. The first base material layer 581 a has a first height h and a first width w. The second and third base material layers 581 b, 581 c have a second height h′ that is less than the first height h and a second width w′ that is less than the first width w.

The lower height h′ and the smaller width w′ of the second and third base material layers 581 b, 581 c, results in a smaller overall radius of curvature R′ of the second and third color filters 508 b, 508 c as compared to the overall radius of curvature R associated with the first color filter 508 a. The second and third color filters 508 b, 508 c are tailored for the underlying second and third photosensitive regions 504 b, 504 c. Additionally, the smaller width w′ of the second and third base material layers 581 b, 581 c allow the second and third color filters 508 b, 508 c to be formed in proximity to one another. As illustrated the second and third color filters 508 b, 508 c have a third distance D3 from one another, corresponding to the second distance D2 between the respective photosensitive regions 504 g, 5404 r. The first and second color filters 508 a, 508 b have a fourth distance D4 from one another, corresponding to the first distance D1 of the underlying respective photosensitive regions 504 b, 504 c.

It should also be noted that although FIGS. 1-10B illustrate three pixel cells, it is not intended to be limiting in any way. Those skilled in the art will recognize that a plurality of pixel cells is typically fabricated in rows and columns in an array on a single substrate simultaneously. Moreover, as noted the embodiments of the invention are not limited to a pixel array employs there color pixels.

FIG. 11 illustrates a device 608 incorporating an imager 100 constructed in accordance with the embodiments of the invention. For the sake of clarity, the imaging device will be described as including the FIG. 1 imager device 100 of FIGS. 1A and 1B; however, it should be noted that any of the embodiments described with respect to FIGS. 1A-10B could be employed for the array of imager device 100.

In operation of the FIG. 11 device 608, the pixel cells 102 of each row in the imager device 100 are all turned on at the same time by a row select line, and the pixel cells 102 of each column are selectively output by respective column select lines. A plurality of row and column lines is provided for the entire array of pixel cells. The row lines are selectively activated in sequence by the row driver 610 in response to row address decoder 620 and the column select lines are selectively activated for each row by the column driver 660 in response to column address decoder 670. Thus, a row and column address is provided for each pixel cell 102. The device 608 is operated by the control circuit 650, which controls address decoders 620, 670 for selecting the appropriate row and column lines for pixel readout, and row and column driver circuitry 610, 660, which apply driving voltage to the drive transistors of the selected row and column lines.

The pixel output signals typically include a pixel reset signal V_(rst) taken off of a floating diffusion region (via a source follower transistor) when it is reset and a pixel image signal V_(sig), which is taken off the floating diffusion region (via the source follower transistor) after charges generated at a photosensor by an image are transferred to it. The V_(rst) and V_(sig) signals are read by a sample and hold circuit 661 and are subtracted by a differential amplifier 662, which produces a difference signal (V_(rst)−V_(sig)) for each pixel cell 102, which represents the amount of light impinging on the pixel cell 102. This signal difference is digitized by an analog-to-digital converter (ADC) 675. The digitized pixel signals are then fed to an image processor 680 to form a digital image output. In addition, as depicted in FIG. 10, the imaging device 608 may be included on a single semiconductor chip (e.g., chip substrate 600).

Detailed descriptions of the functions of various CMOS elements of an imaging circuit are described, for example, in U.S. Pat. No. 6,140,630; U.S. Pat. No. 6,376,868; U.S. Pat. No. 6,310,366; U.S. Pat. No. 6,326,652; U.S. Pat. No. 6,204,524; U.S. Pat. No. 6,333,205; and U.S. Pat. No. 6,852,591, all of which are assigned to Micron Technology, Inc. The disclosures of each of the foregoing are hereby incorporated by reference in their entirety.

FIG. 12 shows a system 900, a typical processor system modified to include an imaging device (such as the FIG. 11 device 608) of the embodiments of the invention. The processor system 900 is an example of a system having digital circuits that could include image sensor devices. Without being limiting, such a system could include a computer system, camera system, scanner, machine vision, vehicle navigation, video phone, surveillance system, auto focus system, star tracker system, motion detection system, image stabilization system, and other systems employing an imager.

System 900, for example a digital camera system, generally comprises a central processing unit (CPU) 902, such as a microprocessor which performs camera control and may also perform image providing functions, that communicates with an input/output (I/O) device 906 over a bus 904. Device 608 also communicates with the CPU 902 over the bus 904. The processor-based system 900 also includes random access memory (RAM) 910, and can include removable memory 914, such as flash memory, which also communicate with the CPU 902 over the bus 904. The device 608 may be combined on a same chip as the CPU 902, with or without memory storage, or on a different chip from the CPU 902.

It should again be noted that although the embodiments of the invention have been described with specific references to CMOS imaging devices (e.g., 100, 200, 300, 400, 500 of FIGS. 1A-10B), they have broader applicability and may be used in any imaging apparatus. For example, embodiments may be used in conjunction with charge coupled device (CCD) imagers. The above description and drawings illustrate embodiments which achieve the objects and features of the invention. Although certain advantages and embodiments have been described above, those skilled in the art will recognize that substitutions, additions, deletions, modifications and/or other changes may be made. Accordingly, the embodiments are not limited by the foregoing description but are only limited by the scope of the appended claims. 

What is claimed as new and desired to be protected by Letters Patent of the United States is:
 1. An imager comprising: a pixel cell array formed in a substrate, the pixel cell array having an array of at least first, second and third photosensors; and a color filter array comprising at least first, second, and third color filters corresponding to the first, second, and third photosensors, and comprising respective first, second and third shaped materials formed over respective spaced first, second, and third blocks of base material, the first, second, and third blocks of base materials having spacer structures between them.
 2. An imager as in claim 1, wherein the first, second, and third base materials are arranged such that at least two of the base material blocks are in closer proximity than one of the at least two base material blocks and a third base material block.
 3. An imager as in claim 1, wherein the first, second and third base materials are all clear in color.
 4. An imager comprising: a pixel cell array formed in a substrate, the pixel cell array having an array of at least first, second and third photosensors; and a color filter array corresponding to the array of photosensors, and comprising respective shaped materials formed over first, second and third base materials, wherein at least one of the base materials has a different width than another of the base materials.
 5. An imager comprising: a pixel cell array formed in a substrate, the pixel cell array having an array of at least first, second and third photosensors; and a color filter array corresponding to the array of photosensors, and comprising respective shaped materials formed over first, second and third base materials, wherein at least one of the shaped layers has a different shape than another of the shaped layers which is defined at least in part by a different base material and spacing structure formed between adjacent base materials.
 6. A method of forming an imaging device, comprising: forming a pixel cell array in a substrate, the pixel cell array having an array of photosensors; forming a color filter array corresponding to the array of photosensors, each of the color filters comprising respective layers formed over base layers; forming a coating formed over the color filter array; and forming spacer structures between at least two of the base materials.
 7. The method of claim 6, wherein the conforming layers have a shape defined at least partially by the base layers and the spacer structures.
 8. The method of claim 6, wherein at least one of the base layers is selectively etched such that at least two of the base layers have different cross-sectional widths.
 9. An imager comprising: a pixel cell array having first, second, and third photo sensors; and a color filter array comprising first, second, and third color filters corresponding to said first, second, and third photo sensors, and comprising respective first, second and third spaced apart base materials formed on a support surface and first, second, and third conforming materials respectively formed over said first second and third base materials such that at least first and second conforming materials at least partially fill in a space between spaced apart first and second base materials and extend to said support surface; wherein at least one of the first, second, and third base materials has a cross sectional width which differs from the cross sectional width of another of said first, second and third base materials. 